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Journal of Micro/Nanolithography, MEMS, and MOEMS

Fabrication of functional electromechanical nanowire resonators by focused ion beam implantation
Author(s): Jordi Llobet; Marta Gerbolés; Marc Sansa; Joan Bausells; Xavier Borrisé; Francesc Pérez-Murano
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Paper Abstract

A fast and flexible fabrication method that allows the creation of silicon structures of various geometries is presented. It is based on the combination of focused ion beam local gallium implantation, selective silicon etching, and diffusive boron doping. The structures obtained by this resistless method are electrically conductive. Freely suspended mechanical resonators of different dimensions and geometries have been fabricated and measured. The resulting devices present a good electrical conductivity which allows the characterization of their high-frequency mechanical response by electrical read-out.

Paper Details

Date Published: 27 July 2015
PDF: 6 pages
J. Micro/Nanolith. 14(3) 031207 doi: 10.1117/1.JMM.14.3.031207
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 3
Show Author Affiliations
Jordi Llobet, Ctr. Nacional de Microelectrónica (Spain)
Marta Gerbolés, Ctr. Nacional de Microelectrónica (Spain)
Marc Sansa, Ctr. Nacional de Microelectrónica (Spain)
Joan Bausells, Ctr. Nacional de Microelectrónica (Spain)
Xavier Borrisé, Ctr. Nacional de Microelectrónica (Spain)
Francesc Pérez-Murano, Ctr. Nacional de Microelectrónica (Spain)

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