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Journal of Micro/Nanolithography, MEMS, and MOEMS

Pattern transfer into silicon using sub-10 nm masks made by electron beam-induced deposition
Author(s): Marijke Scotuzzi; Martin J. Kamerbeek; Andy Goodyear; Mike Cooke; Cornelis W. Hagen
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Paper Abstract

To demonstrate the possibility of using electron beam-induced deposition (EBID) masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20- to 40-nm EBID masks, which were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine, and boron trichloride can selectively etch silicon when using 20- to 40-nm masks made by EBID. We observed an enhancement of the height ratio, i.e., the ratio of the height of structures before and after etching, up to a factor of 3.5 when using chlorine chemistry. To demonstrate the pattern transfer of sub-10 nm structures, further experiments were carried out using 8- to 20-nm EBID masks in combination with hydrogen bromide, chlorine, and fluorine chemistries. Fluorine chemistry provided the best results in terms of surface smoothness and height ratio. In this case, 7.4-nm lines were successfully transferred into silicon, resulting in 14.3-nm-wide lines with a height ratio of ∼5.

Paper Details

Date Published: 15 July 2015
PDF: 10 pages
J. Micro/Nanolith. MEMS MOEMS 14(3) 031206 doi: 10.1117/1.JMM.14.3.031206
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 3
Show Author Affiliations
Marijke Scotuzzi, Technische Univ. Delft (The Netherlands)
Martin J. Kamerbeek, Technische Univ. Delft (The Netherlands)
Andy Goodyear, Oxford Instruments Plasma Technology Ltd. (United Kingdom)
Mike Cooke, Oxford Instruments Plasma Technology Ltd. (United Kingdom)
Cornelis W. Hagen, Technische Univ. Delft (The Netherlands)

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