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Journal of Micro/Nanolithography, MEMS, and MOEMS

Alternative stitching method for massively parallel e-beam lithography
Author(s): Pieter Brandt; Céline Tranquillin; Marco Wieland; Sébastien Bayle; Matthieu Milléquant; Guillaume Renault
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Paper Abstract

In this study, a stitching method other than soft edge (SE) and smart boundary (SB) is introduced and benchmarked against SE. The method is based on locally enhanced exposure latitude without throughput cost, making use of the fact that the two beams that pass through the stitching region can deposit up to the nominal dose. The method requires a complex proximity effect correction that takes a preset stitching dose profile into account. Although the principle of the presented stitching method can be multibeam (lithography) systems in general, in this study, the MAPPER FLX 1200 tool is specifically considered. For the latter tool at a metal clip at minimum half-pitch of 32 nm, the stitching method effectively mitigates beam-to-beam (B2B) position errors such that they do not induce an increase in critical dimension uniformity (CDU). In other words, the same CDU can be realized inside the stitching region as outside the stitching region. For the SE method, the CDU inside is 0.3 nm higher than outside the stitching region. A 5-nm direct overlay impact from the B2B position errors cannot be reduced by a stitching strategy.

Paper Details

Date Published: 2 July 2015
PDF: 5 pages
J. Micro/Nanolith. 14(3) 031203 doi: 10.1117/1.JMM.14.3.031203
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 3
Show Author Affiliations
Pieter Brandt, MAPPER Lithography (Netherlands)
Céline Tranquillin, Aselta Nanographics (France)
Marco Wieland, MAPPER Lithography (Netherlands)
Sébastien Bayle, Aselta Nanographics (France)
Matthieu Milléquant, Aselta Nanographics (France)
Guillaume Renault, Aselta Nanographics (France)

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