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Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Sub-10-nm patterning process using directed self-assembly with high <inline-formula< <mml:math display="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML"< <mml:mrow< <mml:mi<χ</mml:mi< </mml:mrow< </mml:math< </inline-formula< block copolymers
Author(s): Naoko Kihara; Yuriko Seino; Hironobu Sato; Yusuke Kasahara; Katsutoshi Kobayashi; Ken Miyagi; Shinya Minegishi; Teruaki Hayakawa; Koichi Yatsuda; Tomoharu Fujiwara; Noriyuki Hirayanagi; Hideki Kanai; Yoshiaki Kawamonzen; Katsuyoshi Kodera; Tsukasa Azuma

Paper Abstract

The perpendicularly orientated lamellar structure of the self-organized diblock copolymer is an attractive template for sub-10-nm line-and-space pattern formation. We propose a method of evaluating the neutral layer (NL) whose performance has an important bearing on the perpendicular orientation of the lamellar structure. The random copolymer of methyl methacrylate and i-butyl POSS methacrylate (MAIBPOSS) has been investigated as an NL for a polymethylmethacrylate-b-polymethacrylethylPOSS (PMMA-b-PMAIBPOSS) lamellar structure. PMMA-b-PMAIBPOSS material has the potential to form sub-10 nm line-and-space pattern, in addition to high etch selectivity due to its POSS structure. Under the free surface, PMMA-b-PMAIBPOSS film on the random copolymer layer showed horizontal orientation. However, a half-pitch of a 7-nm finger pattern structure was observed by peeling off the horizontally oriented layer. The upper portion of the PMMA-b-PMAIBPOSS film was eliminated till proximity of the random copolymer layer by CF4 gas etching. From the result, it was revealed that the PMMA-r-PMAIBPOSS works as an NL. It was confirmed that the contact angle analysis using an appropriate polymer is a suitable method for evaluation of the surface energy performance of the copolymer with the attribute of high segregation energy.

Paper Details

Date Published: 9 April 2015
PDF: 7 pages
J. Micro/Nanolith. 14(2) 023502 doi: 10.1117/1.JMM.14.2.023502
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 2
Show Author Affiliations
Naoko Kihara, EUVL Infrastructure Development Ctr., Inc. (Japan)
Yuriko Seino, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hironobu Sato, EUVL Infrastructure Development Ctr., Inc. (Japan)
Yusuke Kasahara, EUVL Infrastructure Development Ctr., Inc. (Japan)
Katsutoshi Kobayashi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Ken Miyagi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Shinya Minegishi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Teruaki Hayakawa, Tokyo Institute of Technology (Japan)
Koichi Yatsuda, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tomoharu Fujiwara, EUVL Infrastructure Development Ctr., Inc. (Japan)
Noriyuki Hirayanagi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hideki Kanai, EUVL Infrastructure Development Ctr., Inc. (Japan)
Yoshiaki Kawamonzen, EUVL Infrastructure Development Ctr., Inc. (Japan)
Katsuyoshi Kodera, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsukasa Azuma, EUVL Infrastructure Development Ctr., Inc. (Japan)


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