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Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Metrology for block copolymer directed self-assembly structures using Mueller matrix-based scatterometry

Paper Abstract

Patterning based on directed self-assembly (DSA) of block copolymer (BCP) has been demonstrated to be a cost-effective manufacturing technique for advanced sub-20-nm structures. This paper describes the application of Mueller matrix spectroscopic ellipsometry (MMSE) based scatterometry to optically characterize polystyrene-b-polymethylmethacrylate patterns and Si fins fabricated with DSA. A regression-based (inverse-problem) approach is used to calculate the line-width, line-shape, sidewall-angle, and thickness of the DSA structures. In addition, anisotropy and depolarization calculations are used to determine the sensitivity of MMSE to DSA pattern defectivity. As pattern order decreases, the mean squared error value increases, depolarization value increases, and anisotropy value decreases. These specific trends are used in the current work as a method to judge the degree of alignment of the DSA patterns across the wafer.

Paper Details

Date Published: 10 April 2015
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 14(2) 021102 doi: 10.1117/1.JMM.14.2.021102
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 2
Show Author Affiliations
Dhairya J. Dixit, SUNY Polytechnic Institute (United States)
Vimal Kamineni, GLOBALFOUNDRIES Inc. (United States)
Richard Farrell, GLOBALFOUNDRIES Inc. (United States)
Erik R. Hosler, GLOBALFOUNDRIES Inc. (United States)
Moshe Preil, GLOBALFOUNDRIES Inc. (United States)
Joseph Race, Nanometrics Inc. (United States)
Brennan Peterson, Nanometrics Inc. (United States)
Alain C. Diebold, SUNY Polytechnic Institute (United States)

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