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Journal of Micro/Nanolithography, MEMS, and MOEMS

Fabrication of self-aligned, nanoscale, complex oxide varactors
Author(s): Richard X. Fu; Ryan C. Toonen; Samuel G. Hirsch; Mathew P. Ivill; Melanie W. Cole; Kenneth E. Strawhecker
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Paper Abstract

Applications in ferroelectric random access memory and superparaelectric devices require the fabrication of ferroelectric capacitors at the nanoscale that exhibit extremely small leakage currents. To systematically study the material-size dependence of ferroelectric varactor performance, arrays of parallel-plate structures have been fabricated with nanoscale dielectric diameters. Electron beam lithography and inductively coupled plasma dry etching have been used to fabricate arrays of ferroelectric varactors using top electrodes as a self-aligned etch mask. Parallel-plate test structures using RF-sputtered Ba0.6Sr0.4TiO3 thin-films were used to optimize the fabrication process. Varactors with diameters down to 20 nm were successfully fabricated. Current-voltage (I-V) characteristics were measured to evaluate the significance of etch-damage and fabrication quality by ensuring low leakage currents through the structures.

Paper Details

Date Published: 3 March 2015
PDF: 5 pages
J. Micro/Nanolith. 14(1) 013508 doi: 10.1117/1.JMM.14.1.013508
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 1
Show Author Affiliations
Richard X. Fu, U.S. Army Research Lab. (United States)
Ryan C. Toonen, The Univ. of Akron (United States)
Samuel G. Hirsch, U.S. Army Research Lab. (United States)
Mathew P. Ivill, U.S. Army Research Lab. (United States)
Melanie W. Cole, U.S. Army Research Lab. (United States)
Kenneth E. Strawhecker, U.S. Army Research Lab. (United States)


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