Share Email Print

Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Phase defect detection signal analysis: dependence of defect size variation

Paper Abstract

The influence of the size or volume of the phase defect embedded in the extreme ultraviolet mask on wafer printability by scanning probe microscope (SPM) is well studied. However, only a few experimental results on the measurement accuracy of the phase defect size have been reported. Therefore, in this study, the measurement repeatability of the phase defect volume using SPM and the influence of the defect volume distribution on defect detection signal intensity (DSI) using an at-wavelength dark-field defect inspection tool were examined. A programmed phase defect mask was prepared, and a defect size measurement repeatability test was conducted using an SPM. As a result, the variation of the measured volume due to the measurement repeatability was much smaller than that of the defect-to-defect variation. This result indicates that measuring the volume of each phase defect is necessary in order to evaluate the defect detection yield using a phase defect inspection tool and wafer printability. In addition, the images of phase defects were captured using an at-wavelength dark-field inspection tool from which the defect DSIs were calculated. The DSI showed a direct correlation with the defect volume.

Paper Details

Date Published: 22 January 2015
PDF: 6 pages
J. Micro/Nanolith. MEMS MOEMS 14(1) 013502 doi: 10.1117/1.JMM.14.1.013502
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 1
Show Author Affiliations
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)

© SPIE. Terms of Use
Back to Top