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Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Efficient three-dimensional resist profile-driven source mask optimization optical proximity correction based on Abbe-principal component analysis and Sylvester equation

Paper Abstract

As one of the critical stages of a very large scale integration fabrication process, postexposure bake (PEB) plays a crucial role in determining the final three-dimensional (3-D) profiles and lessening the standing wave effects. However, the full 3-D chemically amplified resist simulation is not widely adopted during the postlayout optimization due to the long run-time and huge memory usage. An efficient simulation method is proposed to simulate the PEB while considering standing wave effects and resolution enhancement techniques, such as source mask optimization and subresolution assist features based on the Sylvester equation and Abbe-principal component analysis method. Simulation results show that our algorithm is 20× faster than the conventional Gaussian convolution method.

Paper Details

Date Published: 22 December 2014
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 14(1) 011006 doi: 10.1117/1.JMM.14.1.011006
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 14, Issue 1
Show Author Affiliations
Pei-Chun Lin, National Taiwan Univ. (Taiwan)
Chun-Chang Yu, National Taiwan Univ. (Taiwan)
Charlie C. P. Chen, National Taiwan Univ. (Taiwan)

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