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Journal of Micro/Nanolithography, MEMS, and MOEMS

Defect mitigation considerations for EUV photomasks
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Paper Abstract

The introduction of extreme ultraviolet (EUV) lithography into manufacturing requires changes in all aspects of the infrastructure, including the photomask. EUV reflective masks consist of a sophisticated multilayer (ML) mirror, capping layer, absorber layer, and anti-reflective coating thereby dramatically increasing the complexity of the photomask. In addition to absorber type defects similar to those the industry was forced to contend with for deep ultraviolet lithography, the complexity of the mask leads to new classes of ML defects. Furthermore, these approaches are complicated not only by the mask itself but also by unique aspects associated with the exposure of the photomask by the EUV scanner. This paper focuses on the challenges for handling defects associated with inspection, review, and repair for EUV photomasks. Blank inspection and pattern shifting, two completely new steps within the mask manufacturing process that arise from these considerations, and their relationship to mask review and repair are discussed. The impact of shadowing effects on absorber defect repair height is taken into account. The effect of mask biasing and the chief ray angle rotation due to the scanner slit arc shape will be discussed along with the implications of obtaining die-to-die references for inspection and repair. The success criteria for compensational repair of ML defects will be reviewed.

Paper Details

Date Published: 27 October 2014
PDF: 8 pages
J. Micro/Nanolith. MEMS MOEMS 13(4) 043006 doi: 10.1117/1.JMM.13.4.043006
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 13, Issue 4
Show Author Affiliations
Anthony D. Garetto, Carl Zeiss SMS GmbH (Germany)
Renzo Capelli, Carl Zeiss SMS GmbH (Germany)
Frederik Blumrich, Carl Zeiss SMS GmbH (Germany)
Krister Magnusson, Carl Zeiss SMS GmbH (Germany)
Markus Waiblinger, Carl Zeiss SMS GmbH (Germany)
Thomas Scherübl, Carl Zeiss SMS GmbH (Germany)
Jan Hendrik Peters, Carl Zeiss SMS GmbH (Germany)
Michael Goldstein, SEMATECH Inc. (New York, United States)

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