Share Email Print

Journal of Micro/Nanolithography, MEMS, and MOEMS

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography
Author(s): Vikram Singh; Vardhineedi Sri Venkata Satyanarayana; Nikola Batina; Israel Morales Reyes; Satinder K. Sharma; Felipe Kessler; Francine R. Scheffer; Daniel E. Weibel; Subrata Ghosh; Kenneth E. Gonsalves
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Although extreme ultraviolet (EUV) lithography is being considered as one of the most promising next-generation lithography techniques for patterning sub-20 nm features, the development of suitable EUV resists remains one of the main challenges confronting the semiconductor industry. The goal is to achieve sub-20 nm line patterns having low line edge roughness (LER) of <1.8  nm and a sensitivity of 5 to 20  mJ/cm2. The present work demonstrates the lithographic performance of two nonchemically amplified (n-CARs) negative photoresists, MAPDST homopolymer and MAPDST-MMA copolymer, prepared from suitable monomers containing the radiation sensitive sulfonium functionality. Investigations into the effect of several process parameters are reported. These include spinning conditions to obtain film thicknesses <50  nm, baking regimes, exposure conditions, and the resulting surface topographies. The effect of these protocols on sensitivity, contrast, and resolution has been assessed for the optimization of 20 nm features and the corresponding LER/line width roughness. These n-CARs have also been found to possess high etch resistance. The etch durability of MAPDST homopolymer and MAPDST-MMA copolymer (under SF6 plasma chemistry) with respect to the silicon substrate are 7.2∶1 and 8.3∶1, respectively. This methodical investigation will provide guidance in designing new resist materials with improved efficiency for EUVL through polymer microstructure engineering.

Paper Details

Date Published: 16 October 2014
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 13(4) 043002 doi: 10.1117/1.JMM.13.4.043002
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 13, Issue 4
Show Author Affiliations
Vikram Singh, Indian Institute of Technology Mandi (India)
Vardhineedi Sri Venkata Satyanarayana, Indian Institute of Technology Mandi (India)
Nikola Batina, Univ. Autónoma Metropolitana-Unidad Iztapalapa (Mexico)
Israel Morales Reyes, Univ. Autónoma Metropolitana-Unidad Iztapalapa (Mexico)
Satinder K. Sharma, Indian Institute of Technology Mandi (India)
Felipe Kessler, Univ. Federal do Rio Grande do Sul (Brazil)
Francine R. Scheffer, Univ. Federal do Rio Grande do Sul (Brazil)
Daniel E. Weibel, Univ. Federal do Rio Grande do Sul (Brazil)
Subrata Ghosh, Indian Institute of Technology Mandi (India)
Kenneth E. Gonsalves, Indian Institute of Technology Mandi (India)

© SPIE. Terms of Use
Back to Top