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Journal of Micro/Nanolithography, MEMS, and MOEMS

Combining metrology techniques for in-line control of thin SiGe:B layers
Author(s): Delphine Le Cunff; Thomas Nguyen; Romain Duru; Francesco Abbate; Jonny Hoglund; Nicolas Laurent; Frederic Pernot; Matthew Wormington
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Paper Abstract

A study performed to evaluate the benefits of combining techniques to improve the overall metrology of thin silicon germanium (SiGe) epitaxial layers doped with boron is presented. A specifically designed set of wafers was processed and measured by different in-line metrology tools and characterization techniques. This study describes the best strategy for combining metrology techniques in order to reliably determine dopant concentration and Ge composition measurement of the layers. It demonstrates that combined metrology enables key improvements in manufacturing and engineering environments.

Paper Details

Date Published: 15 September 2014
PDF: 7 pages
J. Micro/Nanolith. MEMS MOEMS 13(4) 041402 doi: 10.1117/1.JMM.13.4.041402
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 13, Issue 4
Show Author Affiliations
Delphine Le Cunff, STMicroelectronics (France)
Thomas Nguyen, STMicroelectronics (France)
Romain Duru, STMicroelectronics (France)
Francesco Abbate, STMicroelectronics (France)
Jonny Hoglund, Semilab USA LLC (United States)
Nicolas Laurent, Semilab AMS (United States)
Frederic Pernot, Jordan Valley Semiconductors, Ltd. (Israel)
Matthew Wormington, Jordan Valley Semiconductors, Inc. (Israel)

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