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Journal of Micro/Nanolithography, MEMS, and MOEMS

Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography
Author(s): Xiaolei Liu; Xiangzhao Wang; Sikun Li; Guanyong Yan; Andreas Erdmann
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Paper Abstract

A fast model is developed for the simulation of the mask diffraction spectrum in extreme ultraviolet lithography. It combines a modified thin mask model and an equivalent layer method and provides an analytical expression of the diffraction spectrum of the mask. Based on this model, we perform a theoretical analysis of the mask shadowing effect. Mathematical expressions for the best mask (object space) focus position and for the required correction of the mask pattern size are derived. When the mask focus is positioned in the equivalent plane of the multilayer, the amount of pattern shift is reduced. When the mask pattern size is corrected using the derived formula, taking a space pattern with a target critical dimension (CD) of 22 nm as an example, the imaging CD bias between different oriented features is below 0.3 nm.

Paper Details

Date Published: 8 August 2014
PDF: 8 pages
J. Micro/Nanolith. 13(3) 033007 doi: 10.1117/1.JMM.13.3.033007
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 13, Issue 3
Show Author Affiliations
Xiaolei Liu, Shanghai Institute of Optics and Fine Mechanics (China)
Xiangzhao Wang, Shanghai Institute of Optics and Fine Mechanics (China)
Sikun Li, Shanghai Institute of Optics and Fine Mechanics (China)
Guanyong Yan, Shanghai Institute of Optics and Fine Mechanics (China)
Andreas Erdmann, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)


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