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Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Planarizing material for reverse-tone step and flash imprint lithography
Author(s): Tsuyoshi Ogawa; B. Michael Jacobsson; Ryan Deschner; William K. Bell; Michael W. Lin; Yuji Hagiwara; Satoshi Takei; Makoto Hanabata; C. Grant Willson

Paper Abstract

Reverse-tone step and flash imprint lithography (S-FIL/R) requires materials that can be spin-coated onto patterned substrates with significant topography and that are highly planarizing. Ideally, these planarizing materials must contain silicon for etch selectivity, be UV or thermally curable, and have low viscosity and low volatility. One such unique material, in particular, a branched and functionalized siloxane (Si-12), is able to adequately satisfy the above requirements. This paper describes a study of the properties of epoxy functionalized Si-12 (epoxy-Si-12) as a planarizing layer. An efficient synthetic route to epoxy-Si-12 was successfully developed, which is suitable and scalable for an industrial process. Epoxy-Si-12 has a high silicon content (30.0%), low viscosity (29 cP at 25°C), and low vapor pressure (0.65 Torr at 25°C). A planarizing study was carried out using epoxy-Si-12 on trench patterned test substrates. The material showed excellent planarizing properties and met the calculated critical degree of planarization (critical DOP), which is a requirement for a successful etch process. An S-FIL/R process using epoxy-Si-12 was demonstrated using an Imprio® 100 (Molecular Imprints Inc., Austin, Texas) imprint tool. The results indicate that epoxy-Si-12 works very well as a planarizing layer for S-FIL/R.

Paper Details

Date Published: 16 July 2014
PDF: 7 pages
J. Micro/Nanolith. 13(3) 031302 doi: 10.1117/1.JMM.13.3.031302
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 13, Issue 3
Show Author Affiliations
Tsuyoshi Ogawa, The Univ. of Texas at Austin (United States)
B. Michael Jacobsson, The Univ. of Texas at Austin (United States)
Ryan Deschner, The Univ. of Texas at Austin (United States)
William K. Bell, The Univ. of Texas at Austin (United States)
Michael W. Lin, The Univ. of Texas at Austin (United States)
Yuji Hagiwara, The Univ. of Texas at Austin (United States)
Satoshi Takei, Nissan Chemical Industries, Ltd. (Japan)
Makoto Hanabata, Nissan Chemical Industries, Ltd. (Japan)
C. Grant Willson, The Univ. of Texas at Austin (United States)


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