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Journal of Micro/Nanolithography, MEMS, and MOEMS

Mask defect management in extreme-ultraviolet lithography
Author(s): Nai-Ching Chen; Chia-Hao Yu; Ching-Fang Yu; Chi-Lun Lu; James Chu; Luke T. Hsu; Angus S. Chin; Anthony Yen
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Paper Abstract

We present a series of baseline techniques for inspection, cleaning, repair, and native defect mitigation of extreme ultraviolet (EUV) masks. Deep-ultraviolet inspectors are capable of inspecting patterns down to about 45 nm in pitch on wafer. Cleaning methods involving both chemical and physical forces have achieved good particle removal efficiency while minimizing absorber shrinkage and have realized 90% PRE in removing particles from the backside of an EUV mask. In addition, our compensation method for native defect repair has achieved partial success.

Paper Details

Date Published: 16 June 2014
PDF: 7 pages
J. Micro/Nanolith. 13(2) 023010 doi: 10.1117/1.JMM.13.2.023010
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 13, Issue 2
Show Author Affiliations
Nai-Ching Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chia-Hao Yu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Ching-Fang Yu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chi-Lun Lu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
James Chu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Luke T. Hsu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Angus S. Chin, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)


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