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Journal of Micro/Nanolithography, MEMS, and MOEMS

Line edge and width roughness smoothing by plasma treatment
Author(s): Peter De Schepper; Terje Hansen; Efrain Altamirano-Sanchez; Alessandro V. Pret; Ziad el Otell; Werner Boulart; Stefan De Gendt
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Paper Abstract

Smoothing effects of postlithography plasma treatments on 22-nm lines and spaces are evaluated for two types of extreme ultraviolet photoresists, using five different plasma processes (Ar, H 2 /Ar , HBr, H 2 /N 2 , and H 2 ). Experimental results indicate a reduction in linewidth roughness of about 10% by using an H 2 plasma smoothing process. This smoothing process is mainly triggered by the synergy of vacuum ultraviolet photons and H 2 reactive species during the plasma treatment. Moreover, the smoothing process is dependent on the resist composition and the pattern dimensions. This paper shows the impact of different plasma conditions on roughness reduction for 22-nm lines.

Paper Details

Date Published: 19 May 2014
PDF: 8 pages
J. Micro/Nanolith. 13(2) 023006 doi: 10.1117/1.JMM.13.2.023006
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 13, Issue 2
Show Author Affiliations
Peter De Schepper, IMEC (Belgium)
Katholieke Univ. Leuven (Belgium)
Terje Hansen, IMEC (Belgium)
Katholieke Univ. Leuven (Belgium)
Efrain Altamirano-Sanchez, IMEC (Belgium)
Alessandro V. Pret, IMEC (Belgium)
KLA-Tencor / ICOS Belgium (Belgium)
Ziad el Otell, IMEC (Belgium)
Katholieke Univ. Leuven (Belgium)
Werner Boulart, IMEC (Belgium)
Stefan De Gendt, IMEC (Belgium)
Katholieke Univ. Leuven (Belgium)


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