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Journal of Micro/Nanolithography, MEMS, and MOEMS

Structural improvement in resonant silicon sensors to sub-ppm/°C temperature coefficient of resonance frequency
Author(s): Zhanqiang Hou; Xuezhong Wu; Dingbang Xiao; Zhihua Chen; Jianbin Su
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Paper Abstract

This paper presents a structural improvement method for temperature coefficient of resonance frequency (TCF) in resonant silicon sensors. A silicon resonator, whose mass was suspended by a slanted flexible beam, was adopted in this study. The slanted suspension beam was formed by (1 0 0) and (1 1 1) crystal planes and fabricated by anisotropic wet etching. We propose a stress buffer structure to improve the robustness of resonance frequency against temperature variations. Theoretical considerations of the tested resonator are proposed to augment the effect of the buffer structure. The temperature dependence of the resonance frequency is experimentally characterized over the range −40°C to 60°C. The TCF of the original resonators with no stress buffer structure was linearly fitted to be 36 and 40  ppmC . After using an appropriate stress buffer structure, the TCF is linearly fitted to be −0.98 and 0.36  ppmC . The experimental results suggest that the TCF of the resonator is improved to sub-ppmC level by using a stress buffer structure, which has more than an order of magnitude improvement comparing to the original one. The small range of TCF is much more convenient to be compensated by electrical ways.

Paper Details

Date Published: 20 March 2014
PDF: 9 pages
J. Micro/Nanolith. 13(1) 013016 doi: 10.1117/1.JMM.13.1.013016
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 13, Issue 1
Show Author Affiliations
Zhanqiang Hou, National Univ. of Defense Technology (China)
Xuezhong Wu, National Univ. of Defense Technology (China)
Dingbang Xiao, National Univ. of Defense Technology (China)
Zhihua Chen, National Univ. of Defense Technology (China)
Jianbin Su, National Univ. of Defense Technology (China)


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