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Journal of Micro/Nanolithography, MEMS, and MOEMS

Fabrication of resonator-quantum well infrared photodetector test devices
Author(s): Jason Sun; Kwong-Kit Choi; Kimberley Olver
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Paper Abstract

An optimized detector fabrication process is developed for resonator-quantum well infrared photodetectors (R-QWIPs). The R-QWIPs are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). To achieve the expected performance, the detector geometry must be produced in precise specification. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniformly and accurately realized to within 0.05-μm accuracy. To achieve this specification, an optimized inductively coupled plasma etching process with a nearly infinite etching selectivity for the GaAs over the Al x Ga 1−x As etch-stop layer was developed. Using this etching technique, we have fabricated a number of R-QWIP test detectors with the required dimensions. Their QE spectra were tested to be in close agreement with the QE predictions.

Paper Details

Date Published: 13 January 2014
PDF: 4 pages
J. Micro/Nanolith. MEMS MOEMS 13(1) 013004 doi: 10.1117/1.JMM.13.1.013004
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 13, Issue 1
Show Author Affiliations
Jason Sun, U.S. Army Research Lab. (United States)
Kwong-Kit Choi, U.S. Army Research Lab. (United States)
Kimberley Olver, U.S. Army Research Lab. (United States)

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