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Journal of Micro/Nanolithography, MEMS, and MOEMS

Inverse e-beam lithography on photomask for computational lithography
Author(s): Jin Choi; Ji Soong Park; In Kyun Shin; Chan-Uk Jeon
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Paper Abstract

Computational lithography, e.g., inverse lithography technique (ILT) and source mask optimization, is considered necessary for the “extremely low k1” lithography process of sub-20 nm device node. The ideal design of a curvilinear mask for computational lithography requires many changes during photomask fabrication. These range from preparation of the mask data to measurement and inspection. The manufacturability of a photomask for computational lithography is linked to predictable and manageable quality of patterning. Here, we have proposed the use of “inverse e-beam lithography” on photomask for computational lithography, which overcomes the patterning accuracy limits of conventional e-beam lithography. Furthermore, the preferred target design for ILT, a new verification method, and the accuracy required for the mask model are also discussed; with consideration of acceptable writing time (<24  h ) and computing power.

Paper Details

Date Published: 2 December 2013
PDF: 9 pages
J. Micro/Nanolith. 13(1) 011003 doi: 10.1117/1.JMM.13.1.011003
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 13, Issue 1
Show Author Affiliations
Jin Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Ji Soong Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
In Kyun Shin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chan-Uk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


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