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Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Mask-filtering-based inverse lithography
Author(s): Wen Lv; Qi Xia; Shiyuan Liu

Paper Abstract

We propose a new regularization framework for inverse lithography that regularizes masks directly by applying a mask filtering technique to improve computational efficiency and to enhance mask manufacturability. This technique is different from the conventional regularization method that regularizes a mask by incorporating various penalty functions to the cost function. We design a specific mask filter for this purpose. Moreover, we introduce a metric called edge distance error (EDE) to guide mask synthesis and establish the correlation between pattern error and edge placement error (EPE) via EDE. We prove that EDE has the same dimension as EPE and has a continuous expression as pattern error. Simulation results demonstrating the validity and efficiency of the proposed method are presented.

Paper Details

Date Published: 8 November 2013
PDF: 14 pages
J. Micro/Nanolith. 12(4) 043003 doi: 10.1117/1.JMM.12.4.043003
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 4
Show Author Affiliations
Wen Lv, Huazhong Univ. of Science and Technology (China)
Qi Xia, Huazhong Univ. of Science and Technology (China)
Shiyuan Liu, Huazhong Univ. of Science and Technology (China)


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