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Journal of Micro/Nanolithography, MEMS, and MOEMS

Three-dimensional geometrical modeling of plasma transfer effects on line edge roughness: comparison with experiments and rules of thumb
Author(s): Vassilios Constantoudis; George Kokkoris; Evangelos Gogolides
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Paper Abstract

The transfer of the line edge roughness (LER) from the resist to the substrate sidewall by means of an anisotropic plasma-etching process depends on both the physicochemical reactions of plasma species with the resist and substrate and the morphology of the resist sidewalls. We show that a geometrical model based on the reliable representation of the resist sidewall roughness can capture the main experimental trends and behaviors. Predictions of the model regarding the role of resist sidewall anisotropy and the effects of resist LER on substrate slope are also presented. Finally, rules of thumb defining the slope and the necessary conditions to have LER reduction in substrate sidewalls are derived and discussed.

Paper Details

Date Published: 12 November 2013
PDF: 12 pages
J. Micro/Nanolith. 12(4) 041310 doi: 10.1117/1.JMM.12.4.041310
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 4
Show Author Affiliations
Vassilios Constantoudis, National Ctr. for Scientific Research Demokritos (Greece)
George Kokkoris, National Ctr. for Scientific Research Demokritos (Greece)
Evangelos Gogolides, National Ctr. for Scientific Research Demokritos (Greece)


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