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Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Propagation of surface topography of extreme ultraviolet blank substrate through multilayer and impact of phase defect structure on wafer image

Paper Abstract

Our recent study reveals that the propagation of a phase defect (PD) from an extreme ultraviolet mask substrate surface through a multilayer does not always propagate in a vertical direction. To fully understand the propagation model of PDs, two types of defects on a quartz (Qz) substrate are prepared. One is space patterns fabricated by a mask patterning process followed by an etching giving a cross-sectional angle of 90 deg. The others are atomic force microscopy scratched space patterns with their cross-sectional angles as 30 deg and 60 deg. After coating a patterned Qz substrate with a multilayer, propagation of PDs through the multilayer was observed by a transmit electron microscope (TEM). As a result, the TEM images clearly exhibit a tendency that originates from the Qz substrate while the PDs propagate through the multilayer and their propagation path is inclined toward the center of the mask. The impacts of the inclination angles on the printed images on a wafer are calculated using a simulator. A PD with an inclination angle of 1 deg corresponds to a positional shift of 1 nm on a printed wafer image.

Paper Details

Date Published: 30 August 2013
PDF: 5 pages
J. Micro/Nanolith. 12(3) 033015 doi: 10.1117/1.JMM.12.3.033015
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 3
Show Author Affiliations
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuneo Terasawa, EUVL Infrastructure Development Ctr., Inc. (Japan)


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