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Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Performance of negative tone chemically amplified fullerene resists in extreme ultraviolet lithography
Author(s): Andreas Frommhold; Dongxu Yang; Alexandra McClelland; Xiang Xue; Yasin Ekinci; Richard E. Palmer

Paper Abstract

With extreme ultraviolet lithography (EUVL) emerging as one of the top contenders to succeed from optical lithography for the production of next generation semiconductor devices, the search for suitable resists that combine high resolution, low line edge roughness (LER) and commercially viable sensitivity for high volume production is still ongoing. One promising approach to achieve these goals has been the development of molecular resists. Here we report our investigations into the EUV lithographic performance of a molecular fullerene resist showing resolution down to 20-nm half-pitch with interference lithography with a LER of <5  nm and sensitivity of about 20  mJ/cm 2.

Paper Details

Date Published: 12 August 2013
PDF: 7 pages
J. Micro/Nanolith. 12(3) 033010 doi: 10.1117/1.JMM.12.3.033010
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 3
Show Author Affiliations
Andreas Frommhold, The Univ. of Birmingham (United Kingdom)
Dongxu Yang, The Univ. of Birmingham (United Kingdom)
Alexandra McClelland, The Univ. of Birmingham (United Kingdom)
Xiang Xue, Nano-C, Inc. (United States)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)
Richard E. Palmer, The Univ. of Birmingham (United Kingdom)


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