Share Email Print

Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Spin-on carbon based on fullerene derivatives as hardmask materials for high-aspect-ratio etching
Author(s): Andreas Frommhold; Richard E. Palmer; Alex P. Robinson

Paper Abstract

The advance of lithographic resolution has made it necessary to adopt extremely thin photoresist films for the fabrication of “2× nm” structures in order to mitigate problems such as resist collapse during development but limiting achievable etch depths at the same time. By using multilayer hardmask stacks, a considerable increase in achievable aspect ratio is possible. We have previously presented a fullerene-based spin-on carbon hardmask material capable of high-aspect-ratio etching. We report our latest findings in material characterization of an original and a modified formulation. By using a higher adduct derivative fullerene, the solubility in industry-friendly solvents and thermal stability could be improved. The etching performance and materials characteristics of the new higher-adduct fullerene hardmask were found to be comparable to those of the original hardmask.

Paper Details

Date Published: 9 July 2013
PDF: 6 pages
J. Micro/Nanolith. 12(3) 033003 doi: 10.1117/1.JMM.12.3.033003
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 3
Show Author Affiliations
Andreas Frommhold, The Univ. of Birmingham (United Kingdom)
Richard E. Palmer, The Univ. of Birmingham (United Kingdom)
Alex P. Robinson, The Univ. of Birmingham (United Kingdom)

© SPIE. Terms of Use
Back to Top