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Journal of Micro/Nanolithography, MEMS, and MOEMS

Scalability limits of Talbot lithography with plasma-based extreme ultraviolet sources
Author(s): Serhiy Danylyuk; Peter Loosen; Klaus Bergmann; Hyun-su Kim; Larissa Juschkin
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Paper Abstract

Lithography has been faced with a challenge to bring resolution down to the 10-nm level. One of the promising approaches for such ultra-high-resolution printing is self-imaging Talbot lithography with extreme ultraviolet (EUV) radiation. However, as the size of structures on the mask approaches the wavelength of the radiation, diffraction influence needs to be evaluated precisely to estimate the achievable resolution and quality of the patterns. Here, the results of finite-difference time-domain simulations of the diffraction on EUV transmission masks in dependence to the period (pitch) of the mask are presented with the aim to determine the resolution that can be realistically achieved with the EUV Talbot lithography. The modeled experimental setup is utilizing partially coherent EUV radiation with the wavelength of 10.9 nm from Xe/Ar discharge plasma EUV source and Ni/Nb-based amplitude transmission mask. The results demonstrate that the method can be used to produce patterns with resolution down to 7.5-nm half-pitch with 2∶1 mask demagnification utilizing achromatic Talbot effect and transverse electric (TE)-polarized light.

Paper Details

Date Published: 8 July 2013
PDF: 8 pages
J. Micro/Nanolith. MEMS MOEMS 12(3) 033002 doi: 10.1117/1.JMM.12.3.033002
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 3
Show Author Affiliations
Serhiy Danylyuk, Forschungszentrum Jülich GmbH (Germany)
Peter Loosen, Forschungszentrum Jülich GmbH (Germany)
Klaus Bergmann, Fraunhofer-Institut für Lasertechnik (Germany)
Hyun-su Kim, Forschungszentrum Jülich GmbH (Germany)
Larissa Juschkin, Forschungszentrum Jülich GmbH (Germany)

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