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Journal of Micro/Nanolithography, MEMS, and MOEMS

Three-dimensional x-ray metrology for block copolymer lithography line-space patterns
Author(s): Daniel F. Sunday; Matthew R. Hammond; Chengqing Wang; Wen-li Wu; R. Joseph Kline; Gila E. Stein
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Paper Abstract

We report on the development of a new measurement method, resonant critical-dimension small-angle x-ray scattering (res-CDSAXS), for the characterization of the buried structure of block copolymers (BCP) used in directed self assembly (DSA). We use resonant scattering at the carbon edge to enhance the contrast between the two polymer blocks and allow the determination of the three-dimensional shape of the native lamella in a line–space pattern by CDSAXS. We demonstrate the method by comparing the results from conventional CDSAXS to res-CDSAXS on a 1:1 DSA BCP sample with a nominal 50-nm pitch. The res-CDSAXS method provides substantially improved uncertainty in the fit of the line shape and allows the determination of the buried structure.

Paper Details

Date Published: 12 August 2013
PDF: 8 pages
J. Micro/Nanolith. 12(3) 031103 doi: 10.1117/1.JMM.12.3.031103
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 3
Show Author Affiliations
Daniel F. Sunday, National Institute of Standards and Technology (United States)
Matthew R. Hammond, National Institute of Standards and Technology (United States)
Chengqing Wang, National Institute of Standards and Technology (United States)
Wen-li Wu, National Institute of Standards and Technology (United States)
R. Joseph Kline, National Institute of Standards and Technology (United States)
Gila E. Stein, Univ. of Houston (United States)


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