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Journal of Micro/Nanolithography, MEMS, and MOEMS

Development of a low-hysteresis and high-linearity extended gate field-effect transistor-based chloride ion-sensitive microsensor
Author(s): I-Yu Huang; Chia-Hsun Hsieh; Wei-Chun Chang
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Paper Abstract

A low-hysteresis voltage and high-sensing linearity chloride ion-sensitive sensor based on an extended gate field-effect transistor (EGFET) for real-time water quality monitoring microsystem applications is presented. All of the EGFET-manufacturing processes adopted in this work are compatible with standard integrated circuits planar technology, and therefore, they are very suitable for the mass production. Two EGFET-based chloride ion-sensitive microsensors having same channel width/length ratio (1000  μm/10  μm ) but with different channel geometries (rectangular and annular types) are presented. At pCl 3 (log[Cl ]=−3 ) test point, a very small hysteresis voltage of the rectangular- and annular-channels EGFET-based Cl microsensors (5 and 7 mV, respectively) can be achieved. As the concentrations tested ranging from pCl 1 (log[Cl − ]=−1 ) to pCl 5 (log[Cl ]=−5 ), a very high-sensing linearity (99.23% and 99.08%) of the two types of EGFET-based Cl microsensors is achieved. However, the sensitivity of the rectangular-channel EGFET-based Cl − microsensor (45  mV/pCl ) is much higher than that of the annular-channel EGFET-based Cl microsensor (37  mV/pCl ). The selectivity coefficient of the investigated EGFET-chloride ion sensor under four different interfering ions (OH , F , SO 2− 4 , and Br ) are also measured and analyzed.

Paper Details

Date Published: 12 June 2013
PDF: 11 pages
J. Micro/Nanolith. MEMS MOEMS 12(2) 023016 doi: 10.1117/1.JMM.12.2.023016
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 2
Show Author Affiliations
I-Yu Huang, National Sun Yat-Sen Univ. (Taiwan)
Chia-Hsun Hsieh, National Sun Yat-Sen Univ. (Taiwan)
Wei-Chun Chang, National Sun Yat-Sen Univ. (Taiwan)

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