Share Email Print
cover

Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

Extreme ultraviolet mask defect inspection with a half pitch 16-nm node using simulated projection electron microscope images

Paper Abstract

According to an International Technology Roadmap for Semiconductors (ITRS-2012) update, the sensitivity requirement for an extreme ultraviolet (EUV) mask pattern inspection system is to be less than 18 nm for half pitch (hp) 16-nm node devices. The inspection sensitivity of extrusion and intrusion defects on hp 64-nm line-and-space patterned EUV mask were investigated using simulated projection electron microscope (PEM) images. The obtained defect images showed that the optimization of current density and image processing techniques were essential for the detection of defects. Extrusion and intrusion defects 16 nm in size were detected on images formed by 3000 electrons per pixel. The landing energy also greatly influenced the defect detection efficiency. These influences were different for extrusion and intrusion defects. These results were in good agreement with experimentally obtained yield curves of the mask materials and the elevation angles of the defects. These results suggest that the PEM technique has a potential to detect 16-nm size defects on an hp 64-nm patterned EUV mask.

Paper Details

Date Published: 11 June 2013
PDF: 7 pages
J. Micro/Nanolith. 12(2) 023013 doi: 10.1117/1.JMM.12.2.023013
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 2
Show Author Affiliations
Susumu Iida, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Ryoichi Hirano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuneo Terasawa, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)


© SPIE. Terms of Use
Back to Top