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Journal of Micro/Nanolithography, MEMS, and MOEMS

Phase defect mitigation strategy: unveiling fiducial mark requirements on extreme ultraviolet lithography masks
Author(s): Tetsunori Murachi; Tsuyoshi Amano; Sung Hyun Oh
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Paper Abstract

For extreme ultraviolet lithography (EUVL), the fabrication of defect free multi-layered (ML) mask blanks is a challenge. ML defects are generated by substrate defects and adders during ML coating and are called phase defects (PDs). If we can accept ML blanks with a certain number of PDs, the blank yield will be drastically increased. We can use fewer PD blanks and reduce PD influence by covering them with an absorber layer. To do this, PDs should be located during ML blank defect inspection before absorber patterning. To locate PDs on blanks accurately and precisely, the fiducial marks (FMs) on ML blanks can be used for mask alignment. The defect location accuracy requirement is below 10 nm. We present the results of a feasibility study on the requirements of FMs on EUVL masking by simulations and experiments to establish a PD mitigation method with the EUV actinic blank inspection tool. Based on the results, the optimum ranges for FM lines etched into the ML are 3 to 5 μm in width and at least 100 nm in depth.

Paper Details

Date Published: 31 May 2013
PDF: 11 pages
J. Micro/Nanolith. 12(2) 023008 doi: 10.1117/1.JMM.12.2.023008
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 2
Show Author Affiliations
Tetsunori Murachi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Sung Hyun Oh, EUVL Infrastructure Development Ctr., Inc. (Japan)


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