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Journal of Micro/Nanolithography, MEMS, and MOEMS

Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach
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Paper Abstract

This paper presents the extension of the well-established, rigorous, electromagnetic field solver waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects. The new simulation method uses a rigorously computed multilayer defect data base in combination with on demand modeling of diffraction from absorber structures. Typical computation times are in the range of seconds to a few minutes. Selected simulation examples, including a defect printing exploration and a defect repair, demonstrate the functionality and the capability to perform fast, highly accurate, and flexible EUV multilayer defect computations.

Paper Details

Date Published: 1 March 2013
PDF: 13 pages
J. Micro/Nanolith. 12(2) 021005 doi: 10.1117/1.JMM.12.2.021005
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 2
Show Author Affiliations
Peter Evanschitzky, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Feng Shao, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)
Andreas Erdmann, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB (Germany)


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