Share Email Print
cover

Journal of Micro/Nanolithography, MEMS, and MOEMS

Development of extreme ultraviolet mask pattern inspection technology using projection electron beam optics
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

Extreme ultraviolet (EUV) lithography with a 13.5 nm exposure wavelength is a leading candidate for the next-generation lithography because of its excellent resolution for 16 nm half pitch (hp) node devices and beyond. High sensitivity EUV mask pattern defect detection is one of the major issues to realize device fabrication with EUV lithography. First, to estimate targeted pattern defect detection size, a simulation for defect printability was carried out. In order to achieve the required inspection sensitivity applicable for 1X nm node, a projection electron microscopy (PEM) system was employed, which enabled us to do inspection in higher resolution and with higher speed in comparison to those of the conventional deep ultraviolet and electron beam inspection systems. By incorporating high electron energy and low optical aberration into the PEM, we designed a system for 16 nm hp node defect inspection. To guarantee the quality of the 16 nm node EUV mask, corresponding sized programmed defect masks were designed, and a PEM system defect detection was evaluated by using the current system for 2X nm generation.

Paper Details

Date Published: 28 February 2013
PDF: 8 pages
J. Micro/Nanolith. 12(2) 021003 doi: 10.1117/1.JMM.12.2.021003
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 2
Show Author Affiliations
Ryoichi Hirano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)
Susumu Lida, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuneo Terasawa, EUVL Infrastructure Development Ctr., Inc. (Japan)
Masahiro Hatakeyama, EBARA Corp. (Japan)
Takeshi Murakami, EBARA Corp. (Japan)


© SPIE. Terms of Use
Back to Top