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Journal of Micro/Nanolithography, MEMS, and MOEMS • Open Access

New methodology for through silicon via array macroinspection
Author(s): Yoshihiko Fujimori; Takashi Tsuto; Yuji Kudo; Takeshi Inoue; Kyoichi Suwa; Kazuya Okamoto

Paper Abstract

A new methodology for inspection of through silicon via (TSV) process wafers is developed by utilizing an optical diffraction signal from the wafers. The optical system uses telecentric illumination and has a two-dimensional sensor for capturing the diffracted light from TSV arrays. The diffraction signal modulates the intensity of the wafer image. The optical configuration is optimized for TSV array inspection. The diffraction signal is sensitive to via-shape variations, and an area of deviation from a nominal via is analyzed using the signal. Using test wafers with deep via patterns on silicon wafers, the performance is evaluated and the sensitivities for various pattern profile changes are confirmed. This new methodology is available for high-volume manufacturing of future TSV three-dimensional complementary metal oxide semiconductor devices.

Paper Details

Date Published: 11 February 2013
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 12(1) 013013 doi: 10.1117/1.JMM.12.1.013013
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 1
Show Author Affiliations
Yoshihiko Fujimori, Nikon Corp. (Japan)
Takashi Tsuto
Yuji Kudo, Nikon Corp. (Japan)
Takeshi Inoue, Nikon Corp. (Japan)
Kyoichi Suwa, Nikon Corp. (Japan)
Kazuya Okamoto, Nikon Corp. (Japan)

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