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Journal of Micro/Nanolithography, MEMS, and MOEMS

Aluminum-coated silicon wafer bonding with tin intermediate layer
Author(s): Zhiyuan Zhu; Min Yu; Dayu Tian; Yingwei Zhu; Peiquan Wang; Chenchen Liu; Weimin Wang; Min Miao; Jing Chen; Yufeng Jin
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Paper Abstract

Metallic wafer bonding is becoming a key enabling technology in microelectromechanical systems packaging and heterogeneous integration. We realize the bonding of silicon (Si) wafers coated with aluminum (Al) film with thin tin (Sn) film as the intermediate layer. The bonding pressure is 0.25 MPa. The bonding is achieved at temperatures as low as 280°C after a short bonding time of 3 min. The average bonding strength is 9.9 MPa. The minimum variation of bonding layer thickness is about 0.2 μm within a large area. A fracture surface study and a cross-section analysis are conducted and the bond mechanism is investigated. It is found that the fracture mainly occurs at Al/Sn interface during the shear test. Two bonding conditions are compared and the results show that applying bonding pressure before heating is important to achieve a uniform bonding layer.

Paper Details

Date Published: 11 February 2013
PDF: 6 pages
J. Micro/Nanolith. 12(1) 013012 doi: 10.1117/1.JMM.12.1.013012
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 1
Show Author Affiliations
Zhiyuan Zhu, Peking Univ. (China)
Min Yu, Peking Univ. (China)
Dayu Tian, Peking Univ. (China)
Yingwei Zhu, Southwest China Research Institute of Electronic Equipment (China)
Peiquan Wang, Peking Univ. (China)
Chenchen Liu, Peking Univ. (China)
Weimin Wang, Peking Univ. (China)
Min Miao, Peking Univ. (China)
Jing Chen, Peking Univ. (China)
Yufeng Jin, Peking Univ. (China)


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