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Journal of Micro/Nanolithography, MEMS, and MOEMS

Areal electron beam lithography using a magnetic reticle
Author(s): Aleksandar Aleksov; Dmitri E. Nikonov; Shawna M. Liff
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Paper Abstract

We propose an electron beam lithography system that would allow for pattern transfer from a magnetic reticle to a wafer. The reticle consists of a patterned magnetic media where magnetization of a nanomagnet stores a value of a pixel. Information stored on this media is transferred as a pattern onto the electron-resist via spin-polarized electrons photo-generated from the reticle and spin-filtered along the way to the wafer to generate contrast. It is speculated that such a system offers significantly higher throughput than a multielectron-beam lithography system and may outpace in flexibility, cost and throughput extreme ultra-violet-lithography systems that are currently being developed, while at least matching the resolution of both lithography systems.

Paper Details

Date Published: 11 February 2013
PDF: 8 pages
J. Micro/Nanolith. MEMS MOEMS 12(1) 013010 doi: 10.1117/1.JMM.12.1.013010
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 12, Issue 1
Show Author Affiliations
Aleksandar Aleksov, Intel Corp. (United States)
Dmitri E. Nikonov, Intel Corp. (United States)
Shawna M. Liff, Intel Corp. (United States)

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