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Journal of Micro/Nanolithography, MEMS, and MOEMS

Frequency multiplication of lamellar phase block copolymers with grapho-epitaxy directed self-assembly sensitivity to prepattern
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Paper Abstract

The optimization of a grapho-epitaxy process flow for lamellar phase block copolymer frequency multiplication on full 300 mm wafers is discussed. The process uses a dedicated photoresist that, after hardening, allows direct coating and annealing of the block copolymer over it. Some of the critical parameters for optimization of this process were found to be the selection of the neutral layer material and reduction of the prepattern resist height. Process window analysis was done by determining the best dose and focus settings for generating high quality directed self-assembly structures with the prepattern process. A very small process window for good self-assembly and an offset in the optimum dose and focus settings for these two stages of the process were found. Finally, the sensitivity of the process to programmed prepattern imperfections was studied. Programmed protrusions in the prepattern as small as 6 nm were found to cause self-assembly defects.

Paper Details

Date Published: 10 July 2012
PDF: 7 pages
J. Micro/Nanolith. 11(3) 031303 doi: 10.1117/1.JMM.11.3.031303
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 11, Issue 3
Show Author Affiliations
Roel Gronheid, IMEC (Belgium)
Paulina A. Rincon Delgadillo, Univ. of Wisconsin-Madison (United States)
Ivan Pollentier, IMEC (Belgium)
Paul F. Nealey, Univ. of Wisconsin-Madison (United States)
Todd R. Younkin, Intel Corp. (Belgium)
Mark H. Somervell, Tokyo Electron America, Inc. (United States)
Joshua S. Hooge, Tokyo Electron America, Inc. (United States)
Kathleen Nafus, Tokyo Electron America, Inc. (United States)


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