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Journal of Micro/Nanolithography, MEMS, and MOEMS

Time-dependent electron-beam-induced photoresist shrinkage effects
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Paper Abstract

We explore how photoresist shrinkage behavior due to e-beam measurement by critical dimension-scanning electron microscope (CD-SEM) depends on various time-related factors. This will include an investigation of how the photoresist critical dimension (CD) and CD shrinkage varies with photoresist age and the differences in shrinkage trends between load/unload and static and dynamic repeatability cases, where time between measurements is a key variable. The results for this typical immersion argon flouride photoresist process will show that resist CD and shrinkage variation due to resist age and vacuum-cycling is insignificant, yet the shrinkage is strongly linked to time between consecutive measurements, with a well-defined, high-certainty logarithmic decay with time. These experiments identify a key difference between the shrinkage seen in static versus dynamic measurements, which will be shown to have far-reaching implications for the shrinkage phenomenon in general and for the best-known methods for executing CD-SEM metrology with photoresist samples.

Paper Details

Date Published: 5 June 2012
PDF: 11 pages
J. Micro/Nanolith. 11(2) 023007 doi: 10.1117/1.JMM.11.2.023007
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 11, Issue 2
Show Author Affiliations
Benjamin D. Bunday, SEMATECH North (United States)
Aaron Cordes, SEMATECH North (United States)
Carsten Hartig, GLOBALFOUNDRIES Dresden Module Two, GmbH & Co. KG (Germany)
John A. Allgair, GLOBALFOUNDRIES Dresden Module Two, GmbH & Co. KG (Germany)
Alok Vaid, GLOBALFOUNDRIES Inc. (United States)
Eric Solecky, IBM Corp. (United States)
Narender Rana, IBM Corp. (United States)


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