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Journal of Micro/Nanolithography, MEMS, and MOEMS

Experimental analysis of pattern line width in digital maskless lithography
Author(s): Hoonchul Ryoo; Dong Won Kang; Jae W. Hahn; Yo-Tak Song
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Paper Abstract

We study the distributions of line/space (L/S) patterns based on exposure dose variation using point array techniques (a type of digital maskless lithography). The intensity distributions of L/S patterns were simulated using the point array technique, and the pattern profiles were obtained by applying the effect of the photoresist contrast to the intensity distribution. As the dose increased, line width also increased. An experiment was performed to verify the simulation results. The minimum line widths of the L/S patterns were about 3.44 and 3.89 μm at laser power levels of 100% and 60%, respectively. The standard deviations of the line widths were 0.28 and 0.03 μm at the 4 and 13 μm L/S patterns, respectively.

Paper Details

Date Published: 1 June 2012
PDF: 7 pages
J. Micro/Nanolith. MEMS MOEMS 11(2) 023004 doi: 10.1117/1.JMM.11.2.023004
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 11, Issue 2
Show Author Affiliations
Hoonchul Ryoo, Yonsei Univ. (Korea, Republic of)
Dong Won Kang, Yonsei Univ. (Korea, Republic of)
Jae W. Hahn, Yonsei Univ. (Korea, Republic of)
Yo-Tak Song, OPTO FINETECH Co., Ltd. (Korea, Republic of)

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