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Journal of Micro/Nanolithography, MEMS, and MOEMS

Design of high brightness laser-Compton source for extreme ultraviolet and soft x-ray wavelengths
Author(s): Kazuyuki Sakaue; Akira Endo; Masakazu Washio
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Paper Abstract

Design of a clean, high-brightness light source is presented for extreme ultraviolet/soft x-ray (EUV/SXR) lithography research and mask inspection. Basic characteristics of classical laser-Compton scattering are reviewed, and the laser and electron beam parameters at relatively low energy (EUV to SXR) photon generation are optimized. Recent achievements in each component technology are evaluated on a continuous wave (CW)-operated electron linac and energy recovery linac system, based on superconducting technologies at a 1.3 GHz operation frequency, 10 kW average power, short pulse CO2 laser, and optical super cavity with a 600- enhancement- factor at 10.6 μm wavelength. Combining both the CW electron beam and short pulse CO2 laser with super-cavity enhancement, 1  mW/2%  ?startb.w.end? flux and 30  kW/mm2/sr/2%  ?startb.w.end? brightness laser-Compton source is designed at 6.7-nm wavelength. The technological gap in the present component technologies are discussed, as well as any further required developments.

Paper Details

Date Published: 3 May 2012
PDF: 8 pages
J. Micro/Nanolith. MEMS MOEMS 11(2) 021124 doi: 10.1117/1.JMM.11.2.021124
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 11, Issue 2
Show Author Affiliations
Kazuyuki Sakaue, Waseda Univ. (Japan)
Akira Endo, Waseda Univ. (Japan)
Masakazu Washio, Waseda Univ. (Japan)

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