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Journal of Micro/Nanolithography, MEMS, and MOEMS

Extreme ultraviolet lasers: principles and potential for next-generation lithography
Author(s): Juerg E. Balmer; Davide Bleiner; Felix Staub
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Paper Abstract

Extreme ultraviolet (EUV) lasers in the wavelength range of ~ 10 to 20 nm have matured to a point where dedicated applications such as at-wavelength inspection of extreme-ultraviolet lithography (EUVL) masks become possible on the laboratory scale. The authors briefly review the principles of plasma-based EUV lasers, the progress made so far, and the output characteristics of interest to the EUVL community.

Paper Details

Date Published: 10 May 2012
PDF: 5 pages
J. Micro/Nanolith. MEMS MOEMS 11(2) 021119 doi: 10.1117/1.JMM.11.2.021119
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 11, Issue 2
Show Author Affiliations
Juerg E. Balmer, Univ. Bern (Switzerland)
Davide Bleiner, Univ. Bern (Switzerland)
Felix Staub, Univ. Bern (Switzerland)

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