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Journal of Micro/Nanolithography, MEMS, and MOEMS

Atomic-hydrogen cleaning of Sn from Mo/Si and DLC/Si extreme ultraviolet multilayer mirrors
Author(s): Wouter A. Soer; Maarten M.J.W. van Herpen; Martin J. Jak; Peter Gawlitza; Stefan Braun; Nikolay N. Salashchenko; Vadim Y. Banine
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Paper Abstract

We have investigated the use of atomic-hydrogen-based cleaning to remove Sn contamination from extreme ultraviolet (EUV) multilayer mirrors. Mo and Si surfaces were cleaned at a relatively slow rate due to catalyzed dissociation of tin hydride on these surfaces. Mo/Si mirrors with B4C and Si3N4 cap layers and DLC-terminated DLC/Si mirrors showed complete removal of 10 nm Sn in 20 sec with full restoration of EUV reflectance. In addition, a prolonged cleaning treatment of 300 sec of a DLC/Si mirror resulted in only a minor EUV peak reflection loss of 1.2% absolute and no significant changes in infrared reflectance.

Paper Details

Date Published: 3 May 2012
PDF: 6 pages
J. Micro/Nanolith. MEMS MOEMS 11(2) 021118 doi: 10.1117/1.JMM.11.2.021118
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 11, Issue 2
Show Author Affiliations
Wouter A. Soer, Philips Research Nederland B.V. (Netherlands)
Maarten M.J.W. van Herpen, Philips Research Nederland B.V. (Netherlands)
Martin J. Jak, Philips Research Nederland B.V. (Netherlands)
Peter Gawlitza, Fraunhofer IWS Dresden (Germany)
Stefan Braun, Fraunhofer IWS Dresden (Germany)
Nikolay N. Salashchenko, Institute for Physics of Microstructures (Russian Federation)
Vadim Y. Banine, ASML Netherlands B.V. (Netherlands)

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