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Journal of Micro/Nanolithography, MEMS, and MOEMS

Microelectromechanical torsional varactors with low parasitic capacitances and high dynamic range
Author(s): Chenniappan Venkatesh; Navakanta Bhat; K. J. Vinoy; Satish Grandhi
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Paper Abstract

This work focuses on the design of torsional microelectromechanical systems (MEMS) varactors to achieve highdynamic range of capacitances. MEMS varactors fabricated through the polyMUMPS process are characterized at low and high frequencies for their capacitance-voltage characteristics and electrical parasitics. The effect of parasitic capacitances on tuning ratio is studied and an equivalent circuit is developed. Two variants of torsional varactors that help to improve the dynamic range of torsional varactors despite the parasitics are proposed and characterized. A tuning ratio of 1:8, which is the highest reported in literature, has been obtained. We also demonstrate through simulations that much higher tuning ratios can be obtained with the designs proposed. The designs and experimental results presented are relevant to CMOS fabrication processes that use low resistivity substrate.

Paper Details

Date Published: 27 February 2012
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 11(1) 013006 doi: 10.1117/1.JMM.11.1.013006
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 11, Issue 1
Show Author Affiliations
Chenniappan Venkatesh, Indian Institute of Science (India)
Navakanta Bhat, Indian Institute of Science (India)
K. J. Vinoy, Indian Institute of Science (India)
Satish Grandhi, Indian Institute of Science (India)

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