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Journal of Micro/Nanolithography, MEMS, and MOEMS

Relationship between localized wafer shape changes induced by residual stress and overlay errors
Author(s): Kevin T. Turner; Sathish Veeraraghavan; Jaydeep K. Sinha
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Paper Abstract

The deposition of films with nonuniform residual stress can induce local changes in wafer shape and contribute to overlay errors with magnitudes that may be significant in advanced lithographic patterning processes. Understanding the fundamental relationship between residual stress, localized wafer shape changes, and overlay error is crucial for realizing new schemes to manage overlay errors, particularly at advanced nodes where feature sizes are smaller. In the present work, finite element modeling is used to quantitatively relate nonuniform residual stress in a deposited thin film to localized wafer shape changes and overlay errors. The results demonstrate that there is a strong correlation between localized shape variations induced by nonuniform residual stresses and noncorrectable overlay errors.

Paper Details

Date Published: 21 March 2012
PDF: 9 pages
J. Micro/Nanolith. MEMS MOEMS 11(1) 013001 doi: 10.1117/1.JMM.11.1.013001
Published in: Journal of Micro/Nanolithography, MEMS, and MOEMS Volume 11, Issue 1
Show Author Affiliations
Kevin T. Turner, Univ. of Pennsylvania (United States)
Sathish Veeraraghavan, KLA-Tencor Corp. (United States)
Jaydeep K. Sinha, KLA-Tencor Corp. (United States)

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