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Journal of Astronomical Telescopes, Instruments, and Systems • Open Access

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

Paper Abstract

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

Paper Details

Date Published: 11 September 2015
PDF: 8 pages
J. Astron. Telesc. Instrum. Syst. 1(4) 046001 doi: 10.1117/1.JATIS.1.4.046001
Published in: Journal of Astronomical Telescopes, Instruments, and Systems Volume 1, Issue 4
Show Author Affiliations
Kurt D. Retherford, Southwest Research Institute (United States)
Yibin Bai, Teledyne Imaging Sensors (United States)
Kevin K. Ryu, MIT Lincoln Lab. (United States)
James A. Gregory, MIT Lincoln Lab. (United States)
Paul B. Welander, MIT Lincoln Lab. (United States)
SLAC National Accelerator Lab. (United States)
Michael W. Davis, Southwest Research Institute (United States)
Thomas K. Greathouse, Southwest Research Institute (United States)
Gregory S. Winters, Southwest Research Institute (United States)
Vyshnavi Suntharalingam, MIT Lincoln Lab. (United States)
James W. Beletic, Teledyne Imaging Sensors (United States)

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