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Journal of Astronomical Telescopes, Instruments, and Systems

Enhancing the noise performance of monolithic microwave integrated circuit-based low noise amplifiers through the use of a discrete preamplifying transistor
Author(s): Mark A. McCulloch; Simon J. Melhuish; Lucio Piccirillo
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Paper Abstract

An approach to enhancing the noise performance of an InP monolithic microwave integrated circuit (MMIC)-based low noise amplifiers (LNA) through the use of a discrete 100-nm gate length InP high electron mobility transistor is outlined. This LNA, known as a transistor in front of MMIC (T + MMIC) LNA, possesses a gain in excess of 40 dB and an average noise temperature of 9.4 K across the band 27 to 33 GHz at a physical temperature of 8 K. This compares favorably with 14.5 K for an LNA containing an equivalent MMIC. A simple advanced design system model offering further insights into the operation of the LNA is also presented and the LNA is compared with the current state-of-the-art <italic<Planck</italic< LFI LNAs.

Paper Details

Date Published: 28 October 2014
PDF: 6 pages
J. Ast. Inst. Sys. 1(1) 016001 doi: 10.1117/1.JATIS.1.1.016001
Published in: Journal of Astronomical Telescopes, Instruments, and Systems Volume 1, Issue 1
Show Author Affiliations
Mark A. McCulloch, The Univ. of Manchester (United Kingdom)
Simon J. Melhuish, The Univ. of Manchester (United Kingdom)
Lucio Piccirillo, The Univ. of Manchester (United Kingdom)


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