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Optical Engineering

Design approach and comparison of projection cameras for EUV lithography
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Paper Abstract

This paper presents an approach to designing all-reflective, projection cameras for EUV lithography. We make a comparison of fourmirror cameras with numerical apertures ranging from 0.1 to 0.2 and ring-field widths from 1.0 to 3.6 mm. Additionally, we present two theoretical models that allow for the phase change introduced by multilayer coatings

Paper Details

Date Published: 1 March 2000
PDF: 11 pages
Opt. Eng. 39(3) doi: 10.1117/1.602429
Published in: Optical Engineering Volume 39, Issue 3
Show Author Affiliations
Scott A. Lerner, Optical Sciences Ctr./Univ. of Arizona (United States)
Jose M. Sasian, Optical Sciences Ctr./Univ. of Arizona (United States)
Michael R. Descour, Optical Sciences Ctr./Univ. of Arizona (United States)


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