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Optical Engineering

Increased efficiency of silicon light-emitting diodes in a standard 1.2-um silicon complementary metal oxide semiconductor technology
Author(s): Lukas Willem Snyman; Herzl Aharoni; Monuko du Plessis; Rudolph Barend Johannes Gouws
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Paper Abstract

Scaled versions of a variety of silicon light-emitting diode elements (Si LEDs) have been realized using a standard 1.2-µm, doublepolysilicon, double-metal, n-well CMOS fabrication process. The devices operated with a n+p junction biased in the avalanche breakdown mode and were realized by using standard features of the ORBIT FORESIGHT design rules. The elements emit optical radiation in a broad band in the 450- to 850-nm range. An emitted intensity (radiant exitance) of up to 7.1 µW/cm2 (or about 8 nW per 60-µm-diam chip area) has been obtained with 5 mA of current at an operating voltage of 18.5 V. Excellent uniformity in emission intensity of better than 1% variation was obtained over areas as large as 100x500 µm. A best power conversion efficiency of 8.7x 10-8 and a quantum efficiency of 7.8x 10-7 were measured. All of these values are about one order of magnitude better than previously reported values for Si LED avalanche devices. Coupling between the elements as well as electro-optical coupling between an element and an optical fiber was realized.

Paper Details

Date Published: 1 July 1998
PDF: 9 pages
Opt. Eng. 37(7) doi: 10.1117/1.601792
Published in: Optical Engineering Volume 37, Issue 7
Show Author Affiliations
Lukas Willem Snyman, Univ. of Pretoria (South Africa)
Herzl Aharoni, Ben Gurion Univ. of the Negev (Israel)
Monuko du Plessis, Univ. of Pretoria (South Africa)
Rudolph Barend Johannes Gouws, Univ. of Pretoria (South Africa)


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