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Optical Engineering

Subpixel sensitivity map for a charge-coupled device
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Paper Abstract

The sensitivity across a solid state detector array varies as a result of differences in transmission, diffusion and scattering properties over the sensor. This variation will occur over a range of scale lengths and its knowledge is of importance for improved device design and in a variety of applications, for example, event centroiding in photon counting systems. A measurement of the sensitivity variation on a subpixel scale for a two-phase front-illuminated CCD is reported. The measurement is made using a scanning reflection microscope. A variation in sensitivity between the phases within a pixel is clearly observed, as well as variations on a much smaller spatial scale.

Paper Details

Date Published: 1 March 1998
PDF: 7 pages
Opt. Eng. 37(3) doi: 10.1117/1.601788
Published in: Optical Engineering Volume 37, Issue 3
Show Author Affiliations
Daniel Kavaldjiev, Rochester Institute of Technology (United States)
Zoran Ninkov, Rochester Institute of Technology (United States)


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