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Optical Engineering

Infrared reflection polarizers using uniform and Gaussian low-index layers buried in high-index substrates
Author(s): Rasheed M. A. Azzam; Mostofa M. K. Howlader
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Paper Abstract

The extinction ratio (ER) and the throughput or reflectance for the unextinguished s polarization (Rs ) are calculated for infrared reflection polarizers that consist of a low-index transparent layer embedded in a high-index transparent substrate. The dependence of ER and Rs on the depth and width of the buried layer is illustrated by iso-ER and iso-Rs contours for a specific SiO2-in-Si IR reflection polarizer that operates at 3.5-?m wavelength and 80-deg angle of incidence. The two cases of a uniform layer with sharp boundaries and a diffuse Gaussian layer are considered. The diffuse-layer model employs Bruggeman’s effectivemedium theory and is intended to simulate devices that are fabricated by the oxygen-ion implantation of Si. The effect of an outermost oxide film and the angular and wavelength sensitivities of these polarizers are determined.

Paper Details

Date Published: 1 January 1997
PDF: 5 pages
Opt. Eng. 36(1) doi: 10.1117/1.601162
Published in: Optical Engineering Volume 36, Issue 1
Show Author Affiliations
Rasheed M. A. Azzam, Univ. of New Orleans (United States)
Mostofa M. K. Howlader, CREOL/Univ. of Central Florida (United States)

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