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Optical Engineering

Effect of transition metal implantation on the characteristics of In0.52Al0.48As/In0.53Ga0.47As metal-semiconductor-metal detectors
Author(s): Mulpuri V. Rao; Nicolas A. Papanicolaou; Catherine Caneau
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Paper Details

Date Published: 1 December 1996
PDF: 4 pages
Opt. Eng. 35(12) doi: 10.1117/1.601099
Published in: Optical Engineering Volume 35, Issue 12
Show Author Affiliations
Mulpuri V. Rao, George Mason Univ. (United States)
Nicolas A. Papanicolaou, Naval Research Lab. (United States)
Catherine Caneau, Bell Communications Research (United States)

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