Share Email Print

Optical Engineering

SLITS simulator: modeling and simulation of e-beam/deep-ultraviolet exposure and silylation
Author(s): Declan McDonagh; Khalil I. Arshak; Arousian Arshak; Jules Braddell
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

The positive resist image by dry etching (PRIME) process is a high-resolution positive resist system incorporating deep-UV (DUV)/ebeam exposure, silylation (gas/liquid phase), and dry development. A new method to calculate the silylation profile in the PRIME process is presented. New software modules have been added to the 2-D simulator SLITS (simulation of lithography on topographic substrates) to simulate the silylation and dry-developed profiles in the PRIME process. The siIylation and dry-developed profiles for the PRIME process are simulated and compared to experimental results. Simulations were carried out for both e-beam and DUV exposures. Under e-beam exposure, the maximum percentage error between the simulated and experimental results was 13%. Under DUV exposure, the silylation depth at the mask edge can be reduced by increasing the dose thus effectively controlling the resist linewidth.

Paper Details

Date Published: 1 January 1996
PDF: 7 pages
Opt. Eng. 35(1) doi: 10.1117/1.600931
Published in: Optical Engineering Volume 35, Issue 1
Show Author Affiliations
Declan McDonagh, Univ. of Limerick (United States)
Khalil I. Arshak, Univ. of Limerick (Ireland)
Arousian Arshak, Univ. of Limerick (Ireland)
Jules Braddell, N.M.R.C. (Ireland)

© SPIE. Terms of Use
Back to Top