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Optical Engineering

Si-based resonant-cavity-enhanced photodetector
Author(s): Qiming Wang; Cheng Li; Buwen Cheng; Qingqing Yang
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Paper Abstract

We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) resonant-cavity-enhanced (RCE) photodetector fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300 nm. The buried oxygen layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5 V is measured 10.2 mA/W at 1285 nm, a full width at half maximum of 25 nm for the top-illumination RCE photodetector, 19 mA/W at 1305 nm, and a full width at half maximum of 14 nm for the bottom-illumination one. The external quantum efficiency of the bottom- illumination RCE photodetector is up to 2.9% at 1305 nm, with a reverse bias of 25 V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.

Paper Details

Date Published: 1 July 2001
PDF: 3 pages
Opt. Eng. 40(7) doi: 10.1117/1.402679
Published in: Optical Engineering Volume 40, Issue 7
Show Author Affiliations
Qiming Wang, Institute of Semiconductors (China)
Cheng Li, Institute of Semiconductors (China)
Buwen Cheng, Institute of Semiconductors (China)
Qingqing Yang, Institute of Semiconductors (China)


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